A Novel Analytical Formulation of SiC-MOSFET Losses to Size High-Efficiency Three-Phase Inverters

نویسندگان

چکیده

This paper presents a novel analytical loss formulation to predict the efficiency of three-phase inverters using silicon carbide (SiC) metal—oxide—semiconductor field-effect transistors (MOSFETs). The proposed accounts for influence output current harmonic distortion on conduction losses as well impact parasitic capacitances and deadtime switching losses. are formulated in balanced conditions select suitable SiC MOFETs desired target efficiency. To validate methodology, 3-phase inverter is designed present full load excess 99% when built MOSFETs antiparalleled with Schottky diodes selected specified Experimental assessment compared expected values from shown match or exceed predicted results loads ranging 40% 100% load.

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ژورنال

عنوان ژورنال: Energies

سال: 2023

ISSN: ['1996-1073']

DOI: https://doi.org/10.3390/en16020818